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Electrothermal Simulations in Punchthrough and Nonpunchthrough Igbt'S by
  • Pendharkar, S
  • Trivedi, M
  • Shenai, K
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Zero Voltage Switching Behavior of Punchthrough and Nonpunchthrough Insulated Gate Bipolar Transis Tors by
  • Pendharkar, S
  • Shenai, Krishna
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Novel Circuit for acurate Characterization and Modeling ofRevers Recovery of High-Power High-Speed Rectifers. by
  • Winterhalter, C
  • Pendharkar, S
Source: Ieee Transactions on PowerElectronics
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Performance Evaluation of High-Power Gaas Schottky and Silicon P-I-N Retifiers in Hard- and Soft-Switching Applications. by
  • Pendharkar, S
  • Shenai, K
Source: Ieee Transactions on PowerElectronics
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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