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		Modeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices by Yang, Nian Henson, W. Kirklen Wortman, Jimmie J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Estimation OfEffects of Remote Charge Scattering on Electron Mobility of N-Mosfet'S with Ultrathin Gate Oxides by Yang, Nian Henson, W. Kirklen Wortman, Jimmie J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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