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The Effect of Gate Recess Profile on Device Performance of Ga Doped-Channel Fet'S by
  • Lu, Shey-Shi
  • Meng, Chin-Chun
  • lin, Yo-Sheng
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Analysis Design and Optimization of Ingap-Gaas Hbt Matched -Impedance Wide-Band Amplifiers with Multiple Feedback Loops by
  • Chaing, Ming-Chou
  • Lu, Shey-Shi
  • Meng, Chin-Chun
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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