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512-Mb Prom with A Three-Dimensional Array Diode/Antifuse Memory Cells by
  • Johnson, Mark
  • -Shamma, Ali Al
  • Lee, Thomas
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Transmissibility As A Differential Indicator of Structural Damage by
  • Johnson, Mark
Source: Transactions ofAsme, Journal of Vibration and Acoustics
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Magnetoelectronic Memories Last and Last by
  • Johnson, Mark
Source: Ieee Spectrum
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Biphasic, Anisotropic Model ofAortic Wall. by
  • Johnson, Mark
  • Tarbell, John M
Source: Transactions ofAsme, Journal of Biomechanical Engineering
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Communications Data Express: A Gigabit Junction withNext-Generation Internate by
  • Collins, John C
  • Dunn, Joel
  • Emer, Phil
  • Johnson, Mark
Source: Ieee Spectrum
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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