Results of search for 'ccl=su:"Memories"' › Engr Abul Kalam Library catalog

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		Erratic Cell Behavior in Channel Hot Electron Programming of Nor Flash Memories by Grossi, Marco Lanzoni, Massimo Ricco, Bruno Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Statistical Simulations for Flash Memory Reliability Analysis and Prediction by Larcher, Luca Pavan, Paolo Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Impact of Correlated Generation of Oxide Defects on Silc and Breakdown Distributions by Ielmini, Daniele Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Defect Generation Statistics in Thin Gate Oxides by Ielmini, Daniele Spinakis, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical Percolation Model for Predicting Anomalous Charge Loss in Flash Memories by Degraeve, Robin Schuler, F Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 4-Mb on Chip L2 Cache L2 Cache for A 90-Nm 1.6-Ghz 64-Bit Microprocessor by Mcintyre, Hugh Wendell, Dennis Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Design for A Minimium Hamming -Distance Search Using Asynchronous Digital Techniques by Nakahara, Shigeru Kawata, Takahiro Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Circuit Implementations ofDifferential Capacitance Read Scheme (Dcrs) for Ferroelectric Random-Access Memories (Feram) by Eslami, Yadollah Sheikholeslami, Ali Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onPhysical Mechanism ofNrom Memory Erase by Larcher, Luca Pavan, Paolo Eitan, Boaz Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Charge-Transferred Presensing, Negatively Precharged Word-Line, and Temperature-Insensitive Power-Up Schemes for Low-Voltage Drams by Sim, Jae-Yoon Kwon, Kee-Won Chun, Ki-Chul Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 2 X Load/Store Pipe for A Low-Power 1-Ghz Embedded Processor by Chen, Zongjian Murray, Daniel Pearce, Mark Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Programmable Single-Electron Transistor Logic for Future Low-Power Intelligent Lsi Proposal and Room-Temperature Operation by Uchida, Ken Koga, Junji toriumi, Akira Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Ternary Content-Addressable Memory(Tcam) Based on 4t Static Storage and Including A Current-Race Sensing Scheme by Arsovski, Igor Chandler, Trevis Sheikholeslami, Ali Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Erratic Erase in Flash Memories-Part I: Basic Experimental Statistical Characterization by Chimenton, andrea Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Parallel Testing of Multi-Port Static Random Access Memories by Karimi, F Source: Microelectronics Journal Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Erratic Erase in Flash Memories- Part Ii: Dependence on Operating Conditions by Chimenton, andrea Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Low Thermal-Budget Process of Sputtered-Pzt Capacitor Over Multilvel Metallization by Inoue, Naoya Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Statistical Simulation of Leakage Current in Mos and Flash Memory Devices with A New Multiphonon Trap-Assisted Tunneling by Larcher, Luca Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Novel Algorithm for High-Throughput Programming of Multilevel Flash Memories by Grossi, Marco Lanzoni, Massimo Ricco, Bruno Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Impact of Programming Charge Distribution on Threshold Voltage and Subthreshold Slope of Nrom Memory Cells by Larcher, L Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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