Kuhn, H Mnatsakanov, T. T Schlogl, A. E <br/><br/>
Temperature Dependent Characterization on Bipolar Silicon Power Semiconductors- A New Physical Model Validated By Device - Internal Probing Between 400-100k. 

 - 1267-1274 p. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Mobility<br/>Physical Modeling