Noda, Kenji Tatsumi, Toru Nakajima, Ken <br/><br/>
A 0.1 Delta-Doped Mosfet Fabricated with  Post-Low-Energy Implanting Selective Epitaxy 

 - 809-814 p. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Epitaxial Growth Floating-Body Effect<br/>Silicon<br/>Mosfet