Ohguro, Tatsuya Usuda, Kouji Momose, Hisaya Sasaki <br/><br/>
0.15-M Buried-Channel P-Mosfet'S with  Ultrathin Boron-Doped Epitaxial Si Layer 

 - 717-721 p. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Boron-Doped Epitaxial Si<br/>Buried Channel<br/>P-Mosfet