Jiang, Jun Bai, Zi Long Chen, Zhi Hui He, Long <br/><br/>
Temporary  Formation of Highly Conducting Domain Walis  for  Non-Destructive Read-Out of Ferroelectric Domain-Wali Resistance Switching Memories 

 - 49-55 p. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Domain Walis<br/>Insulating Ferroelectric<br/>Non-Destructive Electrical Read-Out