Design and Fabrication of 50-Nm Thin-Body P-Mosfets with A Sige Heterostructure Channel

By: Material type: ArticleArticleDescription: 279-286 pSubject(s): In: Ieee Transactions on Electron Devices
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.49, No.02 (Feb. 2002) Available

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