Improved Hot-Carrier Reliability of Silicon-on-Insulator Transistors By Deuterium Passivation of Defects At Oxide/Silicon Interfaces

By: Material type: ArticleArticleDescription: 529-531 pSubject(s): In: Ieee Transactions on Electron Devices
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.49, No.03 (Mar. 2002) Available

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