High Performance 0.25 Um Gate-Legth Algan / Gan Hemt S on Sapphire with Transconductance of Over 400 Ms / Mm

By: Material type: ArticleArticleDescription: 252-253 pSubject(s): In: IET:IEE: Electronics Letters
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.38, No.05 (Feb. 2002) Available

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