withPromise of Nonvolatility, Practically Infinite Write Endurance, and Short Read and Write Times, Magnetic Tunnel Junction Magnetic Random Access Memory Could Become A Future Mainstream Memory Technology

By: Material type: ArticleArticleDescription: 17-27 pSubject(s): In: Ieee Circuits and Devices Magazine
Holdings
Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.18, No.05 (Sep. 2002) Available

Visit counter For Websites

Copyright © 
Engr Abul Kalam Library, NEDUET, 2024