High Breakdown Voltagealgan-Gan Power-Hemt Design and High Current Density Switching Behavior

By: Material type: ArticleArticleDescription: 2528-2531 pSubject(s): In: Ieee Transactions on Electron Devices
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.50, No.12 (Dec. 2003) Available

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