Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in Tan Gated Nmosfets with High Temperature for ming Gas Annealing

By: Material type: ArticleArticleDescription: 333-340 pSubject(s): In: Ieee Transactions on Electron Devices
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Articles Articles Periodical Section Vol.50, No.02 (Feb. 2003) Available

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