Investigation of A New Ingap-Ingaas Pseudomorphic Double Doped-Channel Heterostructure Field-Effect Transistor (Pddchfet)

By: Material type: ArticleArticleDescription: 1717-1723 pSubject(s): In: Ieee Transactions on Electron Devices
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Articles Articles Periodical Section Vol.50, No.08 (Aug. 2003) Available