onConsistent Modeling of Band-Gap Narrowing for Accurate Device-Level Simulation of Scaled Sige Hbts

By: Material type: ArticleArticleDescription: 1370-1377 pSubject(s): In: Ieee Transactions on Electron Devices
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.50, No.05 (May. 2003) Available

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