Two-Dimensional Semiconductor Device Simulation of Trap-Assisted Generation-Recombination Noise Under Periodic Large-Signal Conditions and Its Use for Developing Cyclostationary Circuit Simulation Models

By: Material type: ArticleArticleDescription: 1353-1362 pSubject(s): In: Ieee Transactions on Electron Devices
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Articles Articles Periodical Section Vol.50, No.05 (May. 2003) Available

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