Large Grain Poly-Si (10 M) Tfts Prepared By Excimer Laser Annealing Through A Thick Sion Absorption Layer

By: Material type: ArticleArticleDescription: 166-172 pSubject(s): In: Ieee Transactions on Electron Devices
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.51, No.02 (Feb. 2004) Available

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