Effect of Emitter Layer Concentration onPerformance of Gaas P-I Homojunction Far-Infraed Detectors a Comparison of Theory and Experiment

By: Material type: ArticleArticleDescription: 1671-1677 pSubject(s): In: IEEE Transactions on Electron Devices
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.45, No.08 (Aug. 1998) Available

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