A Thorough Investigation OfDegradation Induced by Hot-Carrier Injection in Deep Submicron N-and P-Channel Partialiy and Fuliy Depleted

By: Material type: ArticleArticleDescription: 2146-2152 pSubject(s): In: IEEE Transactions on Electron Devices
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.45, No.10 (Oct. 1998) Available

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