Annealing Behavior of a Proton Irradiated A1 Ga-N/Gan High Electron Nobility Transistorgrown by Mbe

By: Material type: ArticleArticleDescription: 304-307 pSubject(s): In: IEEE Transactions on Electron Devices
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.47, No.02 (Feb. 2000) Available

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