a Nove Low-Voltage Content-Addressable- Memory (Cam) Celi with a Fast Tag-Compare Capability Using Partialiy Depleted (Pd) Soi Cmos Dynamic-Threshold (Dtmos) Techniques

By: Material type: ArticleArticleDescription: 712-716 pSubject(s): In: IEEE Journal of Solid-State Circuits
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.36, No.04 (Apr. 2001) Available

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