Investigation of Aix Ga As/Gaas Heterostructure by Annealing at 300-800c

By: Material type: ArticleArticleDescription: 214-216 pSubject(s): In: International Transactions on Electrophysics and Applications
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.5c, No.05 (Oct. 2005) Available

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