Demonstration of Low-Knee Voltage High-Breakdown Gainp Double Heterojunction Bipolar Transistors Using Novel Compound Collector Design (Record no. 775065)

MARC details
000 -LEADER
fixed length control field 00471nab a2200121Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2002 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Zampardi, P J
9 (RLIN) 702912
245 #0 - TITLE STATEMENT
Title Demonstration of Low-Knee Voltage High-Breakdown Gainp Double Heterojunction Bipolar Transistors Using Novel Compound Collector Design
300 ## - PHYSICAL DESCRIPTION
Extent 540-543 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Compound Semiconductor Devices
9 (RLIN) 756188
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2002
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.49, No.04 (Apr. 2002)   19/08/2023 Articles