A Capacitorles Double Gate Dram Technology for Sub-100-Nm Embedded and Stand-Alone Memory Applications (Record no. 762421)
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000 -LEADER | |
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fixed length control field | 00454nab a2200133Ia 4500 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 230808s2003 |||||||f |||| 00| 0 eng d |
100 ## - MAIN ENTRY--PERSONAL NAME | |
Personal name | Kuo, Charles |
9 (RLIN) | 809610 |
245 #2 - TITLE STATEMENT | |
Title | A Capacitorles Double Gate Dram Technology for Sub-100-Nm Embedded and Stand-Alone Memory Applications |
300 ## - PHYSICAL DESCRIPTION | |
Extent | 2409-2416 p. |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name entry element | Double-Gate |
9 (RLIN) | 795368 |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name entry element | Mosfet |
9 (RLIN) | 720139 |
773 ## - HOST ITEM ENTRY | |
Place, publisher, and date of publication | 2003 |
Title | Ieee Transactions on Electron Devices |
International Standard Serial Number | 00189383 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Koha item type | Articles |
-- | 51 |
-- | ABUL KALAM Library |
Not for loan | Home library | Serial Enumeration / chronology | Total Checkouts | Date last seen | Koha item type |
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Engr Abul Kalam Library | Vol.50, No.12 (Dec. 2003) | 19/08/2023 | Articles |