A Capacitorles Double Gate Dram Technology for Sub-100-Nm Embedded and Stand-Alone Memory Applications (Record no. 762421)

MARC details
000 -LEADER
fixed length control field 00454nab a2200133Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2003 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Kuo, Charles
9 (RLIN) 809610
245 #2 - TITLE STATEMENT
Title A Capacitorles Double Gate Dram Technology for Sub-100-Nm Embedded and Stand-Alone Memory Applications
300 ## - PHYSICAL DESCRIPTION
Extent 2409-2416 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Double-Gate
9 (RLIN) 795368
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Mosfet
9 (RLIN) 720139
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2003
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
-- 51
-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.50, No.12 (Dec. 2003)   19/08/2023 Articles
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