A Simulation Study of Gate Line Edge Roughness Effects on Doping Profiles of Short-Channel Mosfet Devices (Record no. 757686)

MARC details
000 -LEADER
fixed length control field 00503nab a2200145Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2004 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Xiong, Shiying
9 (RLIN) 797111
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Boker, Jeff
9 (RLIN) 803373
245 #2 - TITLE STATEMENT
Title A Simulation Study of Gate Line Edge Roughness Effects on Doping Profiles of Short-Channel Mosfet Devices
300 ## - PHYSICAL DESCRIPTION
Extent 228-232 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Doping
9 (RLIN) 725227
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Gate Line Edge Roughness
9 (RLIN) 803374
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2004
Title Ieee Journal of Solid-State Circuits
International Standard Serial Number 00189200
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
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Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.39, No.02 (Feb. 2004)   19/08/2023 Articles
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