A Switched-Current Sensing Architecture for A Four State Per Cell Magnetic Tunnel Junction Mram (Record no. 757187)

MARC details
000 -LEADER
fixed length control field 00545nab a2200145Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2004 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name K.S., Edward
9 (RLIN) 802457
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Ki., Wing-Hung
9 (RLIN) 760808
245 #2 - TITLE STATEMENT
Title A Switched-Current Sensing Architecture for A Four State Per Cell Magnetic Tunnel Junction Mram
300 ## - PHYSICAL DESCRIPTION
Extent 2113-2122 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Magnetoresistive
9 (RLIN) 802458
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Search Methods
9 (RLIN) 802459
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2004
Title Ieee Transactions on Circuits and Systems, I: Fundamental Theory and Applications
International Standard Serial Number 10577122
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.51, No.11 (Nov. 2004)   19/08/2023 Articles
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