Modeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices (Record no. 744137)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 00607nab a2200169Ia 4500 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 230808s1999 |||||||f |||| 00| 0 eng d |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Yang, Nian |
| 9 (RLIN) | 777930 |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Henson, W. Kirklen |
| 9 (RLIN) | 770953 |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Wortman, Jimmie J. |
| 9 (RLIN) | 777933 |
| 245 #0 - TITLE STATEMENT | |
| Title | Modeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 1464-1471 p. |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Capacitance |
| 9 (RLIN) | 707591 |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Dielectric Films |
| 9 (RLIN) | 496077 |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Inversion Layers |
| 9 (RLIN) | 768455 |
| 773 ## - HOST ITEM ENTRY | |
| Place, publisher, and date of publication | 1999 |
| Title | IEEE Transactions on Electron Devices |
| International Standard Serial Number | 00189383 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | Articles |
| -- | 51 |
| -- | ABUL KALAM Library |
| Not for loan | Home library | Serial Enumeration / chronology | Total Checkouts | Date last seen | Koha item type |
|---|---|---|---|---|---|
| Engr Abul Kalam Library | Vol.46, No.07 (Jul. 1999) | 19/08/2023 | Articles |