The Teos Oxide Deposited on Phosphorus in Doped Polysilicon with Rapid Thermal Annealing In (Record no. 744063)

MARC details
000 -LEADER
fixed length control field 00521nab a2200157Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s1998 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Kao, Chyuan-Haur
9 (RLIN) 777750
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Lai, Chao-Sung
9 (RLIN) 777752
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Lee, Chung-Len
9 (RLIN) 777754
245 #4 - TITLE STATEMENT
Title The Teos Oxide Deposited on Phosphorus in Doped Polysilicon with Rapid Thermal Annealing In
300 ## - PHYSICAL DESCRIPTION
Extent 1927-1933 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Phosphorus
9 (RLIN) 163470
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Teos
9 (RLIN) 777756
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 1998
Title IEEE Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.45, No.09 (Sep. 1998)   19/08/2023 Articles
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