High-Current Smali-Parasitic-Capacitance Mosfet on a Poly-Si Interlayed (Psi-)Soi Wafer (Record no. 743931)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 00576nab a2200169Ia 4500 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 230808s1998 |||||||f |||| 00| 0 eng d |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Horiuchi, M |
| 9 (RLIN) | 775985 |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Teshima, Kszuya |
| 9 (RLIN) | 777396 |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Yamaguchi, Ken |
| 9 (RLIN) | 768844 |
| 245 #0 - TITLE STATEMENT | |
| Title | High-Current Smali-Parasitic-Capacitance Mosfet on a Poly-Si Interlayed (Psi-)Soi Wafer |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 1111-1115 p. |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Poly-Si Tft |
| 9 (RLIN) | 777397 |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Soi Mosfet |
| 9 (RLIN) | 716592 |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Subthreshold-Turn-Off Properties |
| 9 (RLIN) | 777398 |
| 773 ## - HOST ITEM ENTRY | |
| Place, publisher, and date of publication | 1998 |
| Title | IEEE Transactions on Electron Devices |
| International Standard Serial Number | 00189383 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | Articles |
| -- | 51 |
| -- | ABUL KALAM Library |
| Not for loan | Home library | Serial Enumeration / chronology | Total Checkouts | Date last seen | Koha item type |
|---|---|---|---|---|---|
| Engr Abul Kalam Library | Vol.45, No.05 (May. 1998) | 19/08/2023 | Articles |