Approaches to Extra Low Voltage Dram Operation by Soi-Dram (Record no. 743394)

MARC details
000 -LEADER
fixed length control field 00553nab a2200169Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s1998 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Eimori, Takahisa
9 (RLIN) 776010
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Oashi, Toshiyuki
9 (RLIN) 776011
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Morishita, Fukashi
9 (RLIN) 776012
245 #0 - TITLE STATEMENT
Title Approaches to Extra Low Voltage Dram Operation by Soi-Dram
300 ## - PHYSICAL DESCRIPTION
Extent 1000-1009 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Dram
9 (RLIN) 757956
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element High-Speed Circuits
9 (RLIN) 776015
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Silicon-on-Insulator (Soi)
9 (RLIN) 776017
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 1998
Title IEEE Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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  Engr Abul Kalam Library Vol.45, No.05 (May. 1998)   19/08/2023 Articles
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