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Accounting for Quantum Effects and Polysilicon Depletion from Weak to Strong Inversion in A Charge-Based Design-Oriented Mosfet Model

Lallement, Christophe Fazan, Pierre C Bucher, Matthias

Accounting for Quantum Effects and Polysilicon Depletion from Weak to Strong Inversion in A Charge-Based Design-Oriented Mosfet Model - 406-417 p.

Subjects--Topical Terms:
Quantum Effect
Charges Modeling
Mosfet Model

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