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A Physically Based Analytical Model for Threshold Voltage of Strained -Si N-Mosfets

Nayfeh, Hasan M. Hoyt, J. W

A Physically Based Analytical Model for Threshold Voltage of Strained -Si N-Mosfets - 2069-2072 p.

Subjects--Topical Terms:
Heterostructure
Mobility Enhancement

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