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A 0.1 Delta-Doped Mosfet Fabricated with Post-Low-Energy Implanting Selective Epitaxy

Noda, Kenji Tatsumi, Toru Nakajima, Ken

A 0.1 Delta-Doped Mosfet Fabricated with Post-Low-Energy Implanting Selective Epitaxy - 809-814 p.

Subjects--Topical Terms:
Epitaxial Growth Floating-Body Effect
Silicon
Mosfet

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