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0.15-M Buried-Channel P-Mosfet'S with Ultrathin Boron-Doped Epitaxial Si Layer

Ohguro, Tatsuya Usuda, Kouji Momose, Hisaya Sasaki

0.15-M Buried-Channel P-Mosfet'S with Ultrathin Boron-Doped Epitaxial Si Layer - 717-721 p.

Subjects--Topical Terms:
Boron-Doped Epitaxial Si
Buried Channel
P-Mosfet

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